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| DISCRETE SEMICONDUCTORS DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability * SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 C; note 1 IC = 15 mA; VCE = 5 V; Tj = 25 C IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C Ic = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C Ic = 5 mA; VCE = 8 V; f = 1 GHz open base CONDITIONS open emitter MIN. - - - - 60 - - - TYP. - - - - 100 8 13 1.3 1 2 3 PINNING PIN DESCRIPTION Code: V2 base emitter collector handbook, 2 columns BFQ67W 3 1 Top view 2 MBC870 Fig.1 SOT323. MAX. 20 10 50 300 - - - - UNIT V V mA mW GHz dB dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 118 C; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 10 2.5 50 300 150 175 V V V mA mW C C UNIT Philips Semiconductors Product specification NPN 8 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C, unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 5 V IC = 15 mA; VCE = 5 V IE = ie = 0; VCB = 8 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C IC = 15 mA; VCE = 8 V; f = 1 GHz Tamb = 25 C IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C F noise figure s = opt; IC = 5 mA; VCE = 8 V; f = 1 GHz s = opt; IC = 15 mA; VCE = 8 V; f = 1 GHz s = opt; IC = 5 mA; VCE = 8 V; f = 2 GHz IC = 5 mA; VCE = 8 V; f = 2 GHz; Zs = 60 s = opt; IC = 15 mA; VCE = 8 V; f = 2 GHz IC = 5 mA; VCE = 8 V; f = 2 GHz; Zs = 60 Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2 BFQ67W PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 118 C; note 1 THERMAL RESISTANCE 190 K/W MIN. - 60 - - - - - - - - - - - - TYP. - 100 0.7 1.3 0.5 8 13 8 1.3 2 2.2 2.5 2.7 3 MAX. 50 - - - - - - - - - - - - - UNIT nA pF pF pF GHz dB dB dB dB dB dB dB dB September 1995 3 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W MRC045- 1 400 handbook, halfpage P tot (mW) 300 MBB301 handbook, halfpage 120 h FE 80 200 40 100 0 0 50 100 150 T ( o C) s 200 0 0 20 40 I C (mA) 60 VCE = 5 V; Tj = 25 C. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. handbook, halfpage 0.8 MRC039 handbook, halfpage 10 MBB303 Cre (pF) 0.6 fT (GHz) 8 6 0.4 4 0.2 2 0 0 0 4 8 VCB (V) 12 0 10 20 30 I C (mA) VCE = 8 V; f = 2 GHz; Tamb = 25 C. 40 IC = 0; f = 1 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. September 1995 4 Philips Semiconductors Product specification NPN 8 GHz wideband transistor In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. BFQ67W MRC042 handbook,20 halfpage MRC040 gain (dB) 15 handbook, halfpage 50 MSG G max G UM gain (dB) 40 G UM 30 10 MSG 20 5 10 0 G max 0 5 10 15 20 25 30 35 I C (mA) 0 10-2 10-1 1 f (GHz) 10 VCE = 8 V; f = 1 GHz; Tamb = 25 C. IC = 5 mA; VCE = 8 V; Tamb = 25 C. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of frequency. handbook, halfpage 50 gain (dB) 40 MRC041 handbook, halfpage 50 MRC043 G UM gain (dB) 40 G UM 30 MSG 20 G max 10 30 MSG 20 10 G max 0 10-2 10-1 1 f (GHz) 10 0 10-2 10-1 1 f (GHz) 10 IC = 15 mA; VCE = 8 V; Tamb = 25 C. IC = 30 mA; VCE = 8 V; Tamb = 25 C. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. September 1995 5 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W 4 handbook, halfpage F (dB) 3 MRC044 2 1 0 1 10 I C (mA) 102 VCE = 8 V; f = 1 GHz. Fig.10 Minimum noise figure as a function of collector current. handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 Fmin = 1.5 dB 0.2 opt 180 0 0.2 0.5 1 F = 2 dB F = 2.5 dB 0.2 F = 3 dB 5 2 5 0 0 5 0.4 0.2 0.5 -135 1 2 -45 MRC046 1.0 -90 IC = 5 mA; VCE = 8 V; f = 1 GHz; Zo = 50 . Fig.11 Noise circle. September 1995 6 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 1 2 5 0 40 MHz 0.2 5 0 0.2 3 GHz 180 0 0.2 0.5 5 0.5 -135 1 2 -45 MRA047 1.0 -90 IC = 15 mA; VCE = 8 V; Zo = 50 . Fig.12 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 135 45 40 MHz 180 3 GHz 50 40 30 20 10 0 -135 -45 -90 IC = 15 mA; VCE = 8 V. MRC048 Fig.13 Common emitter forward transmission coefficient (S21). September 1995 7 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W handbook, full pagewidth 90 135 3 GHz 45 40 MHz 180 0 0.5 0.4 0.3 0.2 0.1 -135 -45 -90 IC = 15 mA; VCE = 8 V. MRC049 Fig.14 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 40 MHz 3 GHz 0.2 5 0 0.2 5 0.5 -135 1 2 -45 MRC050 1.0 -90 IC = 15 mA; VCE = 8 V; Zo = 50 . Fig.15 Common emitter output reflection coefficient (S22). September 1995 8 Philips Semiconductors Product specification NPN 8 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFQ67W SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 September 1995 9 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFQ67W This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 10 |
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